Lucas123 writes: As they announced their new 3D XPoint memory this week, Micron and Intel talked a lot about its performance being 1,000X that of NAND flash, but what they talked less about was how it also has the potential to have 1,000X the endurance of today's most popular non-volatile memories. NAND flash typically can sustain from 3,000 to 10,000 erase-write cycles — more with wear-leveling and ECC. If Micron and Intel's numbers are to be believed, 3D XPoint could exceed one million write cycles. The reason for that endurance involves the material used to create the XPoint architecture, which neither company will disclose. Unlike NAND flash, cross point resistive memory does not use charge trap technology that wears silicon oxide over time or a typical resistive memory filamentary architecture, which creates a statistical variation in how the filaments form each time you program them; that can slow ReRAM's performance and make it harder to scale. Russ Meyer, Micron's director of process integration, said 3D XPoint's architecture doesn't store electrons or use filaments. "The memory element itself is simply moving between two different resistance states," which means there's virtually no wear.
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