Lucas123 writes: Admitting it has bumped up against a 15 nanometer process wall, Toshiba announced it's focusing its efforts on three dimensional NAND using its Bit Cost Scalable technology (PDF) in order to increase capacity. It has dedicated a Japanese fab plant to it and developed 48-level 3D NAND, which bumps density up 33% over previous 3D NAND flash. The new 3D NAND will be able to store 128Gb of data per chip (16GB). Samsung has been mass producing 32-layer, triple-level cell (TLC) 3D NAND since last October and has incorporated it into some of its least expensive SSDs. Yesterday, Micron and Intel announced their own 32-layer 3D TLC NAND, which they claimed will lead to 10TB SSDs. While Toshiba's 3D NAND is multi-level cell (meaning it stores two bits per transistor versus three), the company does plan on developing a TLC version. Toshiba said it's not abandoning 15nm floating gate flash, but it will focus those efforts on lower capacity applications.
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