schliz writes "Researchers have made headway into developing spintronic RAM by successfully transferring spin information from an electron to a more robust atomic nucleus and accessing the information 2,000 times in 100 seconds before it decayed (abstract). The demonstration was conducted using phosphorus-doped silicon in a highly magnetized, low-temperature environment (8.59 Tesla, -269.5 degrees Celsius). Other researchers have achieved spin lifetimes of 30 hours in a weaker magnetic field (0.3 Tesla)."
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