arcticstoat writes: "Transistor technology has just taken another step towards the continuation of Moore's law, as IBM has announced that it's produced a working sample of an SRAM cell built on a 22nm fabrication process at its 300mm research facility in Albany, New York. The technology was developed with several partners, including AMD, Toshiba, STMicroelectronics and Freescale, as well as the College of Nanoscale Science and Engineering (CNSE), where IBM performs a lot of its semiconductor research. IBM says that the miniscule 0.1m cell's development involved 'novel fabrication processes,' including high-NA immersion lithography to print the compact patterns."
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