esocid writes: University of Maryland physicists have shown that in graphene the intrinsic limit to the mobility, a measure of how well a material conducts electricity, is higher than any other known material at room temperature, about 100 times greater than silicon. Graphene, a single-atom-thick sheet of graphite, is a new material which combines aspects of semiconductors and metals. In semiconductors, mobility is used to quantify how fast electrons move. The limit to mobility of electrons in graphene is set by thermal vibration of the atoms and is about 200,000 cm2/Vs at room temperature, compared to about 1,400 cm2/Vs in silicon, and 77,000 cm2/Vs in indium antimonide, the highest mobility conventional semiconductor known. Their results, published online in the journal Nature Nanotechnology, indicate that graphene holds great promise for replacing conventional semiconductor materials such as silicon in applications ranging from high-speed computer chips to biochemical sensors.
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