siliconbits writes: —A single "universal" memory technology that combines the speed of DRAM with the non-volatility and density of flash memory was recently invented at North Carolina State University, according to researchers. The new memory technology, which uses a double floating-gate field-effect-transistor (FET), should enable computers to power down memories not currently being accessed, drastically cutting the energy consumed by computers of all types, from mobile and desktop computers to server farms and data centers, the researchers say.
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