Galactic_grub writes "An experimental new type of memory that uses nanosecond pulses of electric current to push magnetic regions along a wire could dramatically boost the capacity, speed and reliability of storage devices. Magnetic domains are moved along a wire by pulses of polarized current, and their location is read by fixed sensors arranged along the wire. Previous experiments have been disappointing, but now researchers have found that super-fast pulses of electricity prevent the domains from being obstructed by imperfections in the crystal."
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