Galactic_grub writes "An experimental new type of memory that uses nanosecond pulses of electric current to push magnetic regions along a wire could dramatically boost the capacity, speed and reliability of storage devices. Magnetic domains are moved along a wire by pulses of polarized current, and their location is read by fixed sensors arranged along the wire. Previous experiments have been disappointing, but now researchers have found that super-fast pulses of electricity prevent the domains from being obstructed by imperfections in the crystal."
Attend or create a Slashdot 20th anniversary party! DEAL: For $25 - Add A Second Phone Number To Your Smartphone for life! Use promo code SLASHDOT25. Check out the new SourceForge HTML5 Internet speed test. ×