Galactic_grub writes "An experimental new type of memory that uses nanosecond pulses of electric current to push magnetic regions along a wire could dramatically boost the capacity, speed and reliability of storage devices. Magnetic domains are moved along a wire by pulses of polarized current, and their location is read by fixed sensors arranged along the wire. Previous experiments have been disappointing, but now researchers have found that super-fast pulses of electricity prevent the domains from being obstructed by imperfections in the crystal."
He's like a function -- he returns a value, in the form of his opinion.
It's up to you to cast it into a void or not.
-- Phil Lapsley