Platini writes "IBM's high-k/metal gate technology was demonstrated this week, boosting performance by up to 30 percent and reducing power consumption by up to 50 percent on chips manufactured using the 32-nanometer process. This compares to chips manufactured using the 45-nanometer process operating at the similar voltage, according to IBM's benchmarks. For example, when a 45-nm process chip operating at 1.1 volts is scaled to the 32-nm process with high-k metal gate technology it will have a 24 percent increase in speed and a 40 percent reduction in power consumption, said Mukesh Khare, senior manager at IBM's microelectronics division. If the voltage is dropped to 0.95 volts, the chip has an 18 percent increase in speed and a 45 percent reduction in power consumption. The chips can be used in devices from mobile phones to high-performance servers. The company is shipping an evaluation kit that includes chip models and shows customers how to design chips using the high-k/metal gate technology. High-k/metal gate technology uses material to reduce electricity leaks on chips. IBM said it may incorporate the technology when it starts volume production of chips using the 32-nm process.
Intel last year started incorporating high-k/metal gate technology when it began manufacturing chips using the 45-nm process. Intel's chip rival, Advanced Micro Devices, does not use high-k metal gate technology in chips." Link to Original Source
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